교수소개
교수소개
 학과소개 교수소개
 전임교수          |          명예교수

 

이름
최병준
전공
전자재료 / 박막소자
TEL
02-970-6641
E-mail
bjchoi@seoultech.ac.kr
연구실
프론티어관 815호
교수소개 돌아가기
학력
서울대학교 재료공학부 공학사, 2003
서울대학교 재료공학부 공학박사, 2009
주요 경력
미국 펜실베니아 대학교 (UPENN) 연구원, 2009 ~ 2011
미국 휴렛-팩커드 (HP) 연구소 연구원, 2011 ~ 2013

서울과학기술대학교 신소재공학과 조교수, 2013 ~ 2019
University of California Merced 연구년 방문교수, 2020
서울과학기술대학교 신소재공학과 부교수, 2019 ~ 현재
서울과학기술대학교 신소재공학과 학과장, 2021
서울과학기술대학교 산학협력단 연구처 부처장, 2021 ~ 현재
연구 분야
박막공정 – 원자층 증착법(ALD),물리기상 증착법(PVD),화학기상 증착법(CVD) 공정 연구 및 박막 분석
메모리소자 – 상변화메모리 (PRAM), 저항변화메모리 (RRAM), 선택 소자, 크로스바 어레이 연구
뉴로모픽소자 – 멤리스터(memristor) 기반 뉴로모픽(neuromorphic) 소자 연구
에너지 - 분말 ALD를 이용한 이차전지용 전극, 열전 소재 연구
담당 교과목
신소재공학개론(1)(1학년), 고체물리(3학년)
주요논문 및 저서
1. Seok Choi, Yong Kim, Tien Van Nguyen, Won Hee Jeong, Kyeong-Sik Min, and Byung Joon Choi*, “Low-Power Self-Rectifying Memristive Artificial Neural Network for near IoT Sensor Computing”, Advanced Electronic Materials, 7, 2100050 (2021).

2. Seok Choi, Abu Saad Ansari, Hee Ju Yun, Hogyoung Kim, Bonggeun Shong, and Byung Joon Choi*, “Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition”, J. Alloys and Compounds, 854, 157186 (2021).

3. Won Hee Jeong, Jeong Hwan Han, and Byung Joon Choi*, “Effect of Ag concentration dispersed in HfOx thin films on threshold switching”, Nanoscale Research Letters, 15, 27 (2020).

4. Yong Kim, Won Hee Jeong, Son Bao Tran, Hyo Cheon Woo, Jihun Kim, Cheol Seong Hwang, Kyeong-Sik Min, and Byung Joon Choi*, “Memristor crossbar array for binarized neural networks”, AIP Advances, 9, 045131 (2019).

5. Byung Joon Choi, Antonio C. Torrezan, John Paul Strachan, P. G. Kotula, A. J. Lohn, M. J. Marinella, J. Joshua Yang, and R. Stanley Williams, “High-speed and low-energy nitride memristors”, Adv. Funct. Mater. 26, 5290 (2016).

6. Byung Joon Choi, Jiaming Zhang, Kate Norris, Gary Gibson, Kyung Min Kim, Warren Jackson, M.-X. Zhang, Zhiyong Li, J. Joshua Yang, and R. Stanley Williams, “Trilayer tunnel selectors for memristor memory cells", Adv. Mater. 28, 356 (2016).

7. Byung Joon Choi, Antonio C. Torrezan, Kate J. Norris, Feng Miao, John Paul Strachan, Min-Xian Zhang, Douglas A. A. Ohlberg, Nobuhiko P. Kobayashi, J. Joshua Yang, and R. Stanley Williams, “Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch”, Nano Lett. 13, 3213 (2013).

8. Byung Joon Choi, J. Joshua Yang, M.-X. Zhang, Kate J. Norris, Douglas A. A. Ohlberg, Nobuhiko P. Kobayashi, Gilberto Medeiros-Ribeiro, and R. Stanley Williams, “Nitride memristors”, Appl. Phys. A, 109, 1 (2012).

9. Byung Joon Choi, Albert B. K. Chen, Xiang Yang, and I-Wei Chen, “Purely electronic switching with high uniformity, resistance tunability and good retention in Pt-dispersed SiO2 thin films for ReRAM”, Adv. Mater. 23, 3847 (2011).

10. Byung Joon Choi, Seol Choi, Taeyong Eom, Sang Ho Rha, Kyung Min Kim, and Cheol Seong Hwang, “Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multi-level operation”, Appl. Phys. Lett., 97, 132107 (2010).

11. Byung Joon Choi, Seol Choi, Taeyong Eom, Seung Wook Ryu, Jaeyeong Heo, Hyeong Joon Kim, Cheol Seong Hwang, Yoon Jung Kim, and Suk Kyoung Hong “Influence of substrates on the nucleation and growth behaviors of Ge2Sb2Te5 films by combined plasma-enhanced atomic layer and chemical vapor deposition”, Chem. Mater., 21, 2386 (2009).

12. B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, "Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition", J. Appl. Phys. 98, 033715 (2005).
저널 논문
◾ AlGaN-based ternary nitride memristors, APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, vol.127 No.9 pp.660~, 2021최병준
◾ Barrier inhomogeneity and leakage current transport mechanism in vertical Pt/Gd2O3/GaN Schottky diodes, APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, vol.127 No.9 pp.647~, 2021최병준
◾ Barrier reduction and current transport mechanism in Pt/n-InP Schottky diodes using atomic layer deposited ZnO interlayer, JOURNAL JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.32 No.18 pp.22792~22802, 2021최병준
◾ GROWTH TEMPERATURE EFFECT OF ATOMIC-LAYER-DEPOSITED GdOx FILMS, ARCHIVES OF METALLURGY AND MATERIALS, vol.66 No.3 pp.755~758, 2021최병준
◾ 회전형 원자층 증착기의 회전 속도에 따른 SnSe 분말 상 ZnO 박막 증착, 한국분말야금학회지, vol.28 No.3 pp.239~245, 2021최병준
◾ Current transport mechanism of atomic layer deposited ZnO on 3C-SiC/p-Si heterostructure, SOLID STATE COMMUNICATIONS, vol.332 pp.114341~, 2021최병준
◾ Low-Power Self-Rectifying Memristive Artificial Neural Network for Near Internet-of-Things Sensor Computing, ADVANCED ELECTRONIC MATERIALS, vol.7 No.6 pp.2100050~, 2021최병준
◾ Multilevel operation of GdOx-based resistive switching memory device fabricated by post-deposition annealing, CERAMICS INTERNATIONAL, vol.47 No.12 pp.16597~16602, 2021최병준
◾ Tunable solid electrolyte interphase formation on SiO anodes using SnO artificial layers for Lithium-ion batteries, APPLIED SURFACE SCIENCE, vol.549 pp.149028~, 2021최병준
◾ Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts, JOURNAL OF ELECTRONIC MATERIALS, vol.50 No.4 pp.1955~1962, 2021최병준
◾ Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition, JOURNAL OF ALLOYS AND COMPOUNDS, vol.854, 2021최병준
◾ ALD growth of ZnO on p-Si and electrical characterization of ZnO/p-Si heterojunctions, MATERIALS TODAY COMMUNICATIONS, vol.25, 2020최병준
◾ Atomic Layer Deposition of AlN Thin Films on GaN and Electrical Properties in AlN/GaN Heterojunction Diodes, Transactions on Electrical and Electronic Materials, vol.21 No.6 pp.621~629, 2020최병준
◾ ELECTRICAL CHARACTERISTICS OF TIN OXIDE FILMS GROWN BY THERMAL ATOMIC LAYER DEPOSITION, ARCHIVES OF METALLURGY AND MATERIALS, vol.65 No.3 pp.1041~1044, 2020최병준
◾ DILATOMETRIC ANALYSIS OF TIIE SINTERING BEHAVIOR OF Bi2Te3 THERMOELECTRIC POWDERS, ARCHIVES OF METALLURGY AND MATERIALS, vol.65 No.3 pp.1117~1120, 2020최병준
◾ Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis (ethylcyclopentadienyl)magnesium precursor, CERAMICS INTERNATIONAL, vol.46 No.8 pp.10115~10120, 2020최병준
◾ Nucleation and growth behavior of aluminum nitride film using thermal atomic layer deposition, CERAMICS INTERNATIONAL, vol.46 No.9 pp.13372~13376, 2020
[원문보기] 최병준
◾ Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes, COATINGS, vol.10 No.5, 2020최병준
◾ Comparison of electrical and interfacial characteristics between atomic-layer-deposited AlN and AlGaN on a GaN substrate, APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, vol.160 No.77, 2020최병준
◾ Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.108, 2020최병준
◾ Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition, COATINGS, vol.10 No.2, 2020
[원문보기] 최병준
◾ Atomic Layer Deposition of AlGaN on GaN and Current Transport Mechanism in AlGaN/GaN Schottky Diodes, MATERIALS TRANSACTIONS, vol.61 No.1 pp.88~93, 2020최병준
◾ Effect of Ag Concentration Dispersed in HfOx Thin Films on Threshold Switching, NANOSCALE RESEARCH LETTERS, vol.15 No.1, 2020
[원문보기] 최병준
◾ Interfacial and electrical properties of nanolaminated HfO2/Al2O3 dielectrics on GaN with an AlN interlayer, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.35 No.1, 2020최병준
◾ Growth of aluminum nitride thin films by atomic layer deposition and their applications: A review, Korean Journal of Materials Research, vol.29 No.9 pp.567~577, 2019
[원문보기] 최병준
◾ Effects of moisture and electrode material on AlN-based resistive random access memory, CERAMICS INTERNATIONAL, vol.45 No.13 pp.16311~16316, 2019
[원문보기] 최병준
◾ Comparative investigation of interfacial characteristics between HfO2/Al2O3 and Al2O3/HfO2 dielectrics on AlN/p-Ge structure, Korean Journal of Materials Research, vol.29 No.8 pp.463~468, 2019최병준
◾ Si Surface Passivation by Atomic Layer Deposited Al2O3 with In-Situ H2O Prepulse Treatment, Transactions on Electrical and Electronic Materials, vol.20 No.4 pp.359~363, 2019최병준
◾ Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, vol.37 No.4 pp.041203~041203, 2019최병준
◾ SnO-decorated TiO2 nanoparticle with enhanced photocatalytic performance for methylene blue degradation, APPLIED SURFACE SCIENCE, vol.480 pp.1089~1092, 2019최병준
◾ 분말 코팅을 위한 원자층 증착법, 한국분말야금학회지, vol.26 No.3 pp.243~250, 2019
[원문보기] 최병준
◾ Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory, MICROMACHINES, vol.10 No.5, 2019
[원문보기] 최병준
◾ Investigation of fast and slow traps in atomic layer deposited AlN on 4H-SiC, OPTIK, vol.184 pp.527~532, 2019최병준
◾ High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition, ACS APPLIED MATERIALS INTERFACES, vol.11 No.16 pp.14892~14901, 2019최병준
◾ Memristor crossbar array for binarized neural networks, AIP ADVANCES, vol.9 No.4, 2019
[원문보기] 최병준
◾ AlN passivation effect on Au/GaN Schottky contacts, THIN SOLID FILMS, vol.670 pp.41~45, 2019최병준
◾ Improved interfacial properties of thermal atomic layer deposited AlN on GaN, VACUUM, vol.159 pp.379~381, 2019최병준
◾ Characteristics of atomic layer deposited Gd2O3 on n-GaN with an AlN layer, RSC ADVANCES, vol.8 No.74 pp.42390~42397, 2018최병준
◾ Properties of AlN Thin Films on p-Ge Deposited by Thermal Atomic Layer Deposition, Transactions on Electrical and Electronic Materials, vol.19 No.6 pp.462~466, 2018최병준
◾ Memristor Binarized Neural Networks, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol.18 No.5 pp.568~577, 2018최병준
◾ Effects of SnO2 layer coated on carbon nanofiber for the methanol oxidation reaction, CERAMICS INTERNATIONAL, vol.44 No.16 pp.19554~19559, 2018
[원문보기] 최병준
◾ Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes, AIP ADVANCES, vol.8 No.9 pp.095022~, 2018최병준
◾ Electrical characteristics of atomic layer deposited AlN on n-InP, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.29 No.20 pp.17508~17516, 2018최병준
◾ Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol.73 No.3 pp.349~354, 2018최병준
◾ Effect of growth temperature on AlN thin films fabricated by atomic layer deposition, CERAMICS INTERNATIONAL, vol.44 No.14 pp.17447~17452, 2018
[원문보기] 최병준
◾ Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN, NANOSCALE RESEARCH LETTERS, vol.13 pp.232~, 2018최병준
◾ Effect of Atomic Layer Deposited AlN Layer on Pt/4H-SiC Schottky Diodes, Transactions on Electrical and Electronic Materials, vol.19 No.4 pp.235~240, 2018최병준
◾ TEMPERATURE EFFECT ON THE GROWTH RATE AND PHYSICAL CHARACTERISTICS OF SnO2 THIN FILMS GROWN BY ATOMIC LAYER DEPOSITION, ARCHIVES OF METALLURGY AND MATERIALS, vol.63 No.2 pp.1061~1064, 2018최병준
◾ Interfacial properties of atomic layer deposited Al2O3/AlN bilayer on GaN, Korean Journal of Materials Research, vol.28 No.5 pp.268~272, 2018최병준
◾ Electrical conductivity modulation in TaNx films grown by plasma enhanced atomic layer deposition, Korean Journal of Materials Research, vol.28 No.4 pp.241~246, 2018최병준
◾ 전처리를 이용한 탄소 나노 섬유의 균일한 SnO2 코팅막 형성, 한국분말야금학회지, vol.25 No.1 pp.43~47, 2018최병준
◾ Post deposition annealing effect on the properties of Al2O3/InP interface, AIP ADVANCES, vol.8 No.2 pp.025211~025211, 2018최병준
◾ Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory, JOURNAL OF ELECTRONIC MATERIALS, vol.47 No.1 pp.162~166, 2018최병준
◾ Interfacial and electrical properties of Al2O3/GaN metal-oxide-semiconductor junctions with ultrathin AlN layer, APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, vol.123 No.12 , 2017최병준
◾ Scalable excitatory synaptic circuit design using floating gate based leaky integrators, SCIENTIFIC REPORTS, vol.7 , 2017최병준
◾ Metal/nonpolar m-plane ZnO contacts with and without thin Al2O3 interlayer deposited by atomic layer deposition, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.28 No.20 pp.14974~14980, 2017최병준
◾ Tuning electrical properties of Au/n-InP junctions by inserting atomic layer deposited Al2O3 layer, VACUUM, vol.144 pp.256~260, 2017최병준
◾ Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition, ELECTRONIC MATERIALS LETTERS, vol.13 No.4 pp.318~323, 2017
[원문보기] 최병준
◾ Improving interface characteristics of Al2O3-based Metal-Insulator-Semiconductor(MIS) diodes using H2O prepulse treatment by atomic layer deposition, Korean Journal of Materials Research, vol.27 No.7 pp.362~366, 2017최병준
◾ Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability, NANOSCALE, vol.9 No.18 pp.6010~6019, 2017최병준
◾ 산화물 기반 저항변화메모리의 연구 동, 한국전기전자재료학회지, vol.30 No.3 pp.3~16, 2017
[원문보기] 최병준
◾ Electrical conduction mechanism in the insulating TaNxfilm, Korean Journal of Materials Research, vol.27 No.1 pp.32~38, 2017최병준
◾ Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer deposition, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.32 No.2 , 2017최병준
◾ Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application, Nano Letters, vol.16 No.11 pp.6724~6732, 2016최병준
◾ Memristors for Energy-Efficient New Computing Paradigms, Advanced Electronic Materials, vol.2 No.9 pp.1600090~1600090, 2016
[원문보기] 최병준
◾ High-Speed and Low-Energy Nitride Memristors, Advanced Functional Materials, vol.26 No.29 pp.5290~5296, 2016
[원문보기] 최병준
◾ Frequency-dependence of the switching voltage in electronic switching of Pt-dispersed SiO2 thin films, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol.68 No.12 pp.1403~1408, 2016
[원문보기] 최병준
◾ Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator, FRONTIERS IN NEUROSCIENCE, vol.10 No.212 pp.1~16, 2016최병준
◾ 원자층 증착법을 적용한 리튬 이온 전지 연구 동향, 한국분말야금학회지, vol.23 No.2 pp.170~176, 2016
[원문보기] 최병준
◾ Improvement of Reliability by Using Fluorine Doped Tin Oxide Electrode for Ta2O5 Based Transparent Resistive Switching Memory Devices, 신뢰성 응용연구, vol.16 No.1 pp.1~6, 2016최병준
◾ Trilayer Tunnel Selectors for Memristor Memory Cells, Advanced Materials, vol.28 No.2 pp.356~362, 2016
[원문보기] 최병준
◾ Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell, SCIENTIFIC REPORTS, vol.5 No.15965 pp.1~9, 2015최병준
◾ SnO2 마찰층을 이용한 마찰 대전 소자의 에너지 생산성 향상, 한국분말야금학회지, vol.22 No.5 pp.321~325, 2015최병준
◾ Relation between resistance and capacitance in atomically dispersed Pt-SiO2 thin films for multilevel resistance switching memory, Korean Journal of Materials Research, vol.25 No.9 pp.429~434, 2015
[원문보기] 최병준
◾ Thickness-dependent electroforming behavior of ultra-thin Ta2O5 resistance switching layer, Physica Status Solidi - Rapid Research Letters, vol.9 No.6 pp.362~365, 2015최병준
◾ Combined ligand exchange and substitution reactions in atomic layer deposition of conformal Ge2Sb2Te5 film for phase change memory application, Chemistry of Materials, vol.27 No.10 pp.3707~3713, 2015최병준
◾ Chemical interaction and ligand exchange between a [(CH3)(3)Si](3)Sb precursor and atomic layer deposited Sb2Te3 films, JOURNAL OF MATERIALS CHEMISTRY C, vol.3 No.6 pp.1365~1370, 2015최병준
◾ Pt 나노분말이 분산된 SiO2 박막의 구조 및 전기적 특성 제어, 한국분말야금학회지, vol.21 No.5 pp.355~359, 2014최병준
◾ Resolving voltage-time dilemma using an atomic-scale lever of subpicosecond electron-phonon interaction, Nano Letters, vol.14 No.9 pp.5058~5067, 2014최병준
◾ Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe2)((1-x))(Sb2Te3)(x) Layers Using Ge4+-Alkoxide Precursors, CHEMISTRY OF MATERIALS, vol.26 No.4 pp.1583~1591, 2014최병준
◾ Multiprotocol-induced plasticity in artificial synapses, NANOSCALE, vol.6 No.24 pp.15151~15160, 2014최병준
◾ Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials, COORDINATION CHEMISTRY REVIEWS, vol.257 pp.3154~3176, 2013최병준
◾ A replacement of high-k process for CMOS transistor by atomic layer deposition, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.28, 2013최병준
◾ Effects of moisture barriers on resistive switching in Pt-dispersed SiO2 nanometallic thin films, APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, vol.112 No.2 pp.235~239, 2013최병준
◾ Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch, NANO LETTERS, vol.13 No.7 pp.3213~3217, 2013최병준
◾ A physical model of switching dynamics in tantalum oxide memristive devices, APPLIED PHYSICS LETTERS, vol.102 No.22, 2013최병준
◾ Cause and Prevention of Moisture-Induced Degradation of Resistance Random Access Memory Nanodevices, ACS NANO, vol.7 No.3 pp.2302~2311, 2013최병준
◾ Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode, APPLIED PHYSICS LETTERS, vol.102 No.8, 2013최병준
◾ Demonstration and modeling of multi-bit resistance random access memory, APPLIED PHYSICS LETTERS, vol.102 No.4, 2013최병준
◾ Nitride memristors, APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, vol.109 No.1 pp.1~4, 2012최병준
◾ Conformal Formation of (GeTe2)((1-x))(Sb2Te3)(x) Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories, CHEMISTRY OF MATERIALS, vol.24 No.11 pp.2099~2110, 2012최병준
◾ Engineering nonlinearity into memristors for passive crossbar applications, APPLIED PHYSICS LETTERS, vol.100 No.11, 2012최병준
◾ A Parallel Circuit Model for Multi-State Resistive-Switching Random Access Memory, ADVANCED FUNCTIONAL MATERIALS, vol.22 No.3 pp.546~554, 2012최병준
◾ Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt-Dispersed SiO2 Thin Films for ReRAM, ADVANCED MATERIALS, vol.23 No.33 pp.3847~3847, 2011최병준
◾ A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure, NANOTECHNOLOGY, vol.22, 2011최병준
◾ Growth and Phase Separation Behavior in Ge-Doped Sb-Te Thin Films Deposited by Combined Plasma-Enhanced Chemical Vapor and Atomic Layer Depositions, JOURNAL OF PHYSICAL CHEMISTRY C, vol.114 No.41 pp.17899~17904, 2010최병준
◾ Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation, APPLIED PHYSICS LETTERS, vol.97 No.13, 2010최병준
◾ Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition, CHEMISTRY OF MATERIALS, vol.21 No.12 pp.2386~2396, 2009최병준
◾ Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures, APPLIED PHYSICS LETTERS, vol.94 No.22, 2009최병준
◾ Atomic Layer Deposition of TiO2 Films on Ru Buffered TiN Electrode for Capacitor Applications, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol.156 No.7 pp.71~77, 2009최병준
◾ Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol.156 No.12 pp.213~216, 2009최병준
◾ Switching Power Reduction in Phase Change Memory Cell Using CVD Ge2Sb2Te5 and Ultrathin TiO2 Films, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol.156 No.1 pp.59~63, 2009최병준
◾ Ge2Sb2Te5 Charge Trapping Nanoislands with High-k Blocking Oxides for Charge Trap Memory, ELECTROCHEMICAL AND SOLID STATE LETTERS, vol.12 No.10 pp.378~380, 2009최병준
◾ Dependency of threshold switching on density of localized states of Ge(2)Sb(2)Te(5) thin films for phase change random access memory, APPLIED PHYSICS LETTERS, vol.93 No.17, 2008최병준
◾ Phase transformation behaviors of SiO2 doped Ge2Sb2Te5 films for application in phase change random access memory, APPLIED PHYSICS LETTERS, vol.92 No.14 pp.4387~4389, 2008최병준
◾ (In,Sn)(2)O(3)/TiO(2)/Pt Schottky-type diode switch for the TiO(2) resistive switching memory array, APPLIED PHYSICS LETTERS, vol.92 No.16, 2008최병준
◾ Combined atomic layer and chemical vapor deposition, and selective growth of Ge2Sb2Te5 films on TiN/W contact plug, CHEMISTRY OF MATERIALS, vol.19 pp.4387~4389, 2007최병준
◾ Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films, APPLIED PHYSICS LETTERS, vol.90 pp.88~+, 2007최병준
◾ Dynamic threshold switching behavior of Ge2Sb2Te5 and sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe, ELECTROCHEMICAL AND SOLID STATE LETTERS, vol.10 No.9 pp.281~283, 2007최병준
◾ Anode-interface localized filamentary mechanism in resistive switching of Ti O2 thin films, Applied Physics Letters, vol.91 No.1 pp.012907~, 2007최병준
◾ Cyclic PECVD of Ge2Sb2Te5 films using metallorganic sources, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol.154 No.4 pp.318~324, 2007최병준
◾ Characteristics of a capacitive probe array for direct surface charge detection, ELECTROCHEMICAL AND SOLID STATE LETTERS, vol.10 No.1 pp.34~37, 2007최병준
학술대회
Recent invited talks;

1. Byung Joon Choi, J. Joshua Yang, Min-Xian Zhang, R. Stanley Williams, Kate J. Norris, and Nobuhiko P. Kobayashi, “New materials for memristive switching”, The 2014 IEEE International Symposium on Circuits and Systems, Melbourne, Australia, Jun. 1 – 5, 2014.

2. Byung Joon Choi, "Engineering of oxide-based resistive switching materials for nonvolatile memory application", Workshop on Heterostructures 2014, Seoul, Korea, Aug. 28, 2014

3. Byung Joon Choi, J. Joshua Yang, Min-Xian Zhang, R. Stanley Williams, “New Materials for Memristive Switching”, International Conference on Otpoelectronics and Microelectronics Technology and Application (OMTA) 2014, Tianjin, China, Nov. 12 – 14, 2014.

4. Do Yeon Lee, Sung Yeon Ryu, Vladimir Kornijcuk, and Byung Joon Choi, "Multi-layered tunnel barrier selector for resistive switching memory", Korean Ceramic Society 2015 Fall meeting, Songdo Conventia, Incheon, Korea, Nov. 4 - 6, 2015.

5. Byung Joon Choi, "Engineered Electronic Materials Enabled by ALD", MSE BK seminar, Hanyang Univ. ERICA, Mar. 24, 2016.

6. Byung Joon Choi, "Multi-layered selector and switch devices enabled by atomic layer deposition for crosspoint memory", 12th Korean ALD Workshop, Hanyang Univ., Apr. 22, 2016.

7. Byung Joon Choi, "Multi-layered selector and switch devices enabled by atomic layer deposition for crosspoint memory", 16th International Conference on Atomic Layer Deposition, Dublin, Ireland, Jul. 24 - 27, 2016.

8. Min Soo Kim, Seongyeon Ryu, Dong Ha Kim, and Byung Joon Choi, “Ternary nitride memristors”, China Semiconductor Technology International Conference (CSTIC) 2017, Shanghai, China, Mar. 12 – 13, 2017.

9. Yong Kim, Sung Yeon Ryu, Won Hee Jeong, and Byung Joon Choi, “Selector-less crossbar array by self-rectifying memristors”, International Nanophotonics and Nanoenergy Conference (INPEC) 2018, Seoul, Korea, Aug. 26 – 29, 2018.

10. Byung Joon Choi, “Resistive switching materials on demand”, Korea Semiconductor and Display Technology (KSDT) 2018 Fall meeting, Seoul, Korea, Nov. 22, 2018.


국내외 학술대회 발표 (since 2013);
◾ Ha Young Lee, Min Gyoo Cho, Jae Hee Go, Jeong Hwan Han, and Byung Joon Choi, Highly dense titanium nitride thin films grown by hollow cathode plasma atomic layer deposition for Cu diffusion barrier, 2021년 한국세라믹학회 추계학술대회, 제주 라마다 프라자 호텔, 오리엔탈 호텔, 2021최병준
◾ Ha Young Lee, Seok Choi, Ju Hwan Park, Gyu Min Park, and Byung Joon Choi, Ternary nitride memristors enabled by atomic layer deposition, 2021년 한국세라믹학회 추계학술대회, 제주 라마다 프라자 호텔, 오리엔탈 호텔, 2021최병준
◾ Ju Hwan Park and Byung Joon Choi, Fast relaxation process of diffusive memristors by using lithium as active metal, ISIMP2021 Abstract Book, Sono Calm Jeju, Korea, 2021최병준
◾ Ha Young Lee, Byung Joon Choi, and Hogyoung Kim, Inhomogeneous Schottky barrier observed in Pt/Gd2O3/n-GaN Schottky diodes, ISIMP2021 Abstract Book, Sono Calm Jeju, Korea, 2021최병준
◾ Ju Hwan Park, Hee Ju Yun, Jeong Hwan Han, and Byung Joon Choi, Consideration of the reason of reset power reduction in phase change memory by formation of conducting filament in HfO2 interfacial layer, ISIMP2021 Abstract Book, Sono Calm Jeju, Korea, 2021최병준
◾ Myeong Jun Jung, Ye Bin Weon, Ji Young Park, Ye Jun Yun, Jong Min Byun, and Byung Joon Choi, Changes of thermoelectric characteristics of SnSe powder materials by atomic-layer-deposited ZnO thin films, ISIMP2021 Abstract Book, Sono Calm Jeju, Korea, 2021최병준
◾ Ji Young Park, Ye Bin Weon, Myeong Jun Jung, and Byung Joon Choi, Optical, electrical, and structural properties of ZnO films grown by thermal atomic layer deposition, ISIMP2021 Abstract Book, Sono Calm Jeju, Korea, 2021최병준
◾ Myeong Jun Jung, Byung Joon Choi, and Hogyoung Kim, Atomic layer deposition of ZnO on n-InP substrates and current transport mechanisms in Pt/ZnO/n-InP Schottky contacts, ISIMP2021 Abstract Book, Sono Calm Jeju, Korea, 2021최병준
◾ Ju Hwan Park and Byung Joon Choi, Realization of diffusive memristor adopting Li active metal into HfO2 by co-sputtering process, 한국전기전자재료학회 전시회, 워크숍 및 논문발표회, 강원도 평창 알펜시아리조트, 2021최병준
◾ Myeong Jun Jung, Ye Bin Woen, Ji Young Park, Ye Jun Yun, Jong Min Byun, and Byung Joon Choi, Thermoelectric performance enhancement of SnSe powder by introduction of ALD ZnO thin film, 한국전기전자재료학회 전시회, 워크숍 및 논문발표회, 강원도 평창 알펜시아리조트, 2021최병준
◾ Myeong Jun Jung, Byung Joon Choi, and Hogyoung Kim, Electrical characteristics of n-SiC/p-Si heterojunction with atomic layer deposited ZnO, 한국전기전자재료학회 전시회, 워크숍 및 논문발표회, 강원도 평창 알펜시아리조트, 2021최병준
◾ Ha Young Lee, Seok Choi, Min Gyoo Cho, Jae Hee Go, Jeong Hwan Han, and Byung Joon Choi, Electrical characterization of HfN-based diode integration with HfO2-based resistive random-access memory, 한국전기전자재료학회 전시회, 워크숍 및 논문발표회, 강원도 평창 알펜시아리조트, 2021최병준
◾ Seok Choi, Ju Hwan Park, Hee Ju Yun, Hogyoung Kim, and Byung Joon Choi, AlGaN-based Ternary Nitride Memristors, 제28회 한국반도체학술대회 e-proceeding, 온라인 방식, 2021최병준
◾ Hee Ju Yun, Ha Young Lee, Hogyoung Kim, and Byung Joon Choi, Thermally Robust HfN-based Resistive Switching Memory, 제28회 한국반도체학술대회 e-proceeding, 온라인 방식, 2021최병준
◾ Ha Young Lee and Byung Joon Choi, Asymmetric electrical transport of bidirectional diode based on Hafnium nitride film grown by atomic layer deposition, 제28회 한국반도체학술대회 e-proceeding, 온라인 방식, 2021최병준
◾ Ju-Hwan Park, Won Hee Jeong, Hee Ju Yun, and Byung Joon Choi, Relation between remnant conducting filament and its relaxation in diffusive memristors, 제28회 한국반도체학술대회 e-proceeding, 온라인 방식, 2021최병준
◾ Myeong Jun Jung, So Hyun Kwon, Ye Jun Yun, Jong Min Byun and Byung Joon Choi, Electrical modulation of SnSe by changing the thickness of ZnO coating layer, 제28회 한국반도체학술대회 e-proceeding, 온라인 방식, 2021최병준
◾ Seong Ho Baek, Young Min Jeong, Seung Chul Shin, Byung Joon Choi, Jeong Hwan Han, Tunable Solid Electrolyte Interphase Formation on SiO Anode Materials using SnO Artificial Layer for Lithium-ion Batteries, ISNNM-2020 Program book, Phoenix Jeju, Korea, 2020최병준
◾ Gyuhwi Lee, Jong Min Byun, Young-In Lee, Byung Joon Choi, Hogyoung Kim, and Sung-Tag Oh, Effect of Sintering Condition on Microstructure and Properties of Bi2Te3-based Thermoelectric Alloy Powders, ISNNM-2020 Program book, Phoenix Jeju, Korea, 2020최병준
◾ Ha Young Lee, Ju Hwan Park, Hee Ju Yun, Seok Choi and Byung Joon Choi, Electrical conduction mechanism of HfN based bidirectional diode, ISNNM-2020 Program book, Phoenix Jeju, Korea, 2020최병준
◾ Hogyoung Kim, Myeong Jun Jung, Seok Choi and Byung Joon Choi, Electrical properties of atomic layer deposited n-ZnO/n-GaN heterojunction diodes, ISNNM-2020 Program book, Phoenix Jeju, Korea, 2020최병준
◾ Ju Hwan Park, Won Hee Jeong, Ha Young Lee , Hee Ju Yun, and Byung Joon Choi, Scaling effect of threshold switching in diffusive memristors, ISNNM-2020 Program book, Phoenix Jeju, Korea, 2020최병준
◾ Myeong Jun Jung, So Hyun Kwon, Ye Jun Yun, Jong Min Byun, and Byung Joon Choi, Effects of atomic-layer-deposited ZnO layer on SnSe powder materials, ISNNM-2020 Program book, Phoenix Jeju, Korea, 2020최병준
◾ Seok Choi, Hee Ju Yun, Byung Joon Choi, Time-Domain Thermoreflectance Study on Superlattice-like Phase Changing Chalcogenide Materials, PRiME2020, Virtual conference, 2020최병준
◾ Hee Ju Yun, Seok Choi, Byung Joon Choi, Electrical Characteristics of Phase ChangeMemory By Adding HfO2 Layer between Phase ChangeMaterials and Heater Layer, PRiME2020, Virtual conference, 2020최병준
◾ Wangu Kang, Byung Joon Choi, Jeong Hwan Han, Growth and Film Properties of Plasma- Enhanced and Thermal Atomic-Layer-Deposited Magnesium Oxide Films Using Bis(ethylcyclopentadienyl)Magnesium Precursor, PRiME2020, Virtual conference, 2020최병준
◾ Hee Ju Yun, Ha Young Lee, Ju Hwan Park, and Byung Joon Choi, Multilevel Operation of Hf(O)N-based Resistive Random Access Memory Grown by Atomic Layer Deposition, 한국전기전자재료학회 하계학술대회, 강원도 휘닉스 평창 호텔, 2020최병준
◾ Myeong Jun Jung, So Hyun Kwon, Ye Jun Yun, Jong Min Byun, and Byung Joon Choi, Characterization of SnSe thermoelectric powder materials coated by rotary atomic layer deposition, 한국전기전자재료학회 하계학술대회, 강원도 휘닉스 평창 호텔, 2020최병준
◾ Seok Choi, So Hyeon Kwon, Hee Ju Yun, Byung Joon Choi, Thermal analysis of superlattice-like phase change materials by time-domain thermoreflectance, 한국전기전자재료학회 하계학술대회, 강원도 휘닉스 평창 호텔, 2020최병준
◾ 윤희주, 최석, 최병준, Effects of interfacial layer between phase change materials and heater on phase change memory, 한국전기전자재료학회 하계학술대회, 강원도 휘닉스 평창 호텔, 2020최병준
◾ Ha Young Lee, Hee Ju Yun, Seok Choi, Ju Hwan Park and Byung Joon Choi, Fabrication and characterization of Hafnium nitride based selector device in crossbar array by atomic layer deposition, 한국전기전자재료학회 하계학술대회, 강원도 평창 휘닉스 호텔, 2020최병준
◾ Chae Rim Lee, Hee Ju Yun, Jeong Hwan Han, and Byung Joon Choi, Oxide Semiconductor Based Photonic Memristors By Atomic Layer Deposition, 한국반도체학술대회 프로그램북, 강원도 하이원리조트, 2020최병준
◾ Seok Choi, Hee Ju Yun, Won Hee Jeong, Jeong Hwan Han, and Byung Joon Choi, Electrical Properties of AlGaN Thin Films Grown By Thermal Atomic Layer Deposition, 한국반도체학술대회 프로그램북, 강원도 하이원리조트, 2020최병준
◾ Jae Wook Lee, Myeong Jun Jung, Seung Chul Shin, Ju-Yeon Han, Myeong Jun Ji, Seung Hee Ko, Jong Min Byun, Jeong Hwan Han, Young-In Lee, Doh-Hyung Riu, SungTag Oh, and Byung Joon Choi, Coating Characteristics On The Thermoelectric Powder Materials By Two Types of Atomic Layer Deposition Reactor, 한국반도체학술대회 프로그램북, 강원도 하이원리조트, 2020최병준
◾ Hee Ju Yun, Seok Choi, Ha Young Lee, and Byung Joon Choi, Effect Of Insertion Layer On The Electrical Characteristics Of Phase Change Memory, 한국반도체학술대회 프로그램북, 강원도 하이원리조트, 2020최병준
◾ 최병준, 원자층 증착법을 이용한 질화물 박막의 저온 성장 및 전자소자 응용, 한국표면공학회 추계학술대회 프로그램북, 경상북도 경주시 경주교원드림센터, 2019최병준
◾ Hee Ju Yun, and Byung Joon Choi, Nucleation and Growth Mode of AlN Film by Atomic Layer Deposition, Program Book of International Conference on Advanced Electromaterials, 제주시 라마다 플라자, 2019최병준
◾ Seok Choi, Hee Ju Yun, Byung Joon Choi, Time-domain thermoreflectance study on the superlattice-like phase change materials, Program book of International Conference on Advanced Electromaterials, 제주시 라마다 플라자, 2019최병준
◾ Jae Wook Lee, Myeong Jun Jung, Seung Chul Shin, Ju-Yeon Han, Myeong Jun Ji, Seung Hee Ko, Jong Min Byun, Jeong Hwan Han, Young-In Lee, Doh-Hyung Riu, Sung-Tag Oh, and Byung Joon Choi, Atomic interface engineering of thermoelectric materials by atomic layer deposition, Program book ISIMP, 제주 서귀포시 휘닉스 제주, 2019최병준
◾ Won Hee Jeong, Ha Young Lee, Jeong Hwan Han, Byung Joon Choi, Effects of doping on the threshold switching of Ag-doped HfOx thin film, Program book of International Conference on Advanced Electromaterials, 제주시 라마다 플라자, 2019최병준
◾ Chae Rim Lee, Jeong Hwan Han, Tae-Kun Lee, and Byung Joon Choi, Photonic memristors based on Ga2O3 thin films grown by atomic layer deposition, Abstract book ISIMP, 제주 서귀포시 휘닉스 제주, 2019최병준
◾ Byung Joon Choi, Atomic layer deposition of AlN-based films and electronic application, Programbook of International Nanophotonics and Nanoenergy Conference (INPEC) 2019, Taiyuan University of Technology, China, 2019최병준
◾ Won Hee Jeong, Jeong Hwan Han, and Byung Joon Choi, Effects of film thickness and doping amount on switching characteristics of Ag-doped HfOx thin film, Programbook of International Nanophotonics and Nanoenergy Conference (INPEC) 2019, Taiyuan University of Technology, China, 2019최병준
◾ Yong Kim, Won Hee Jeong, Hee Ju Yun, Seok Choi, Kyeong-Sik Min, and Byung Joon Choi, Memristor crossbar array for binarized neural networks, 대한전자공학회 하계종합학술대회 초록집, 제주시 메종글래드 제주 , 2019최병준
◾ Yong Kim , Won Hee Jeong , Kyeong-Sik Min , Byung Joon Choi, Binarized neural networks enabled by forming-free memristor, Proceeding of Electronic Materials Conference 2019, University of Michigan, Ann Arbor, 2019최병준
◾ Sung Yeon Ryu, Hee Ju Yun, Woo Young Park, Soo Gill Kim, Jaehyun Han, Se Ho Lee, Byung Joon Choi, Effect of Doping in HfOx Based ReRAM, 제 26회 한국반도체학술대회 - Final Program Book, 강원도 웰리힐리파크, 대한민국, 2019최병준
◾ Sung Yeon Ryu, Hyo Won Nam, Hee Ju Yun, Woo Young Park, Soo Gil Kim, Jaehyun Han, Se Ho Lee, Byung Joon Choi, Resistive Switching Properties of Gd2O3 Thin Film Prepared by Atomic Layer Deposition, 제 26회 한국반도체학술대회 - Final Program Book, 강원도 웰리힐리파크, 대한민국, 2019최병준
◾ Hogyoung Kim, Hee Ju Yoon, Byung Joon Choi, Characterizing Interface Traps in Atomic Layer Deposited AlN on 4H-SiC, 제 26회 한국반도체학술대회 - Final Program Book, 강원도 웰리힐리파크, 대한민국, 2019최병준
◾ Nam Do Kim, Sang Chul An, Hee Ju Yun, Byung Joon Choi, Hogyoung Kim, Comparative Study on the Electrical Properties of Schottky Diodes on GaN and InP with Thin AlN Interlayer, 제 26회 한국반도체학술대회 - Final Program Book, 강원도 웰리힐리파크, 대한민국, 2019최병준
◾ Seung Ik Oh, Sung Yeon Ryu, Won Hee Jeong, Byung Joon Choi, Thermal and Electrical Effect of Electrode Materials on Phase Transition of GeTe Layer, 제 26회 한국반도체학술대회 - Final Program Book, 강원도 웰리힐리파크, 대한민국, 2019최병준
◾ Won Hee Jeong, Yong Kim, Jeong Hwan Han, Byung Joon Choi, Transition of Memory Switching and Threshold Switching of Ag-Doped HfOx Thin Film, 제 26회 한국반도체학술대회 - Final Program Book, 강원도 웰리힐리파크, 대한민국, 2019최병준
◾ Seok Choi, Jeong Hwan Han, Byung Joon Choi, Formation of AlxGa1-xN Thin Films by Thermal Atomic Layer Deposition, 제 26회 한국반도체학술대회 - Final Program Book, 강원도 웰리힐리파크, 대한민국, 2019최병준
◾ Hee Ju Yun, Yong Kim, Byung Joon Choi, Effect of Electrode Material and its Size on AlN Based Resistive Switching Memory Device, 제 26회 한국반도체학술대회 - Final Program Book, 강원도 웰리힐리파크, 대한민국, 2019최병준
◾ 최병준, Atomic craft and interfaces for Neuromorphic system, 제 1회 Atomic Craft and Interfaces Workshop, Haeundae Grand Hotel, Busan, Korea, 2018최병준
◾ 오승익, 류성연, 최병준, 발열층이 GeTe 상전이에 미치는 열적 효과 고찰, 2018년 추계학술대회 - 인공 지능 시대의 반도체/디스플레이 기술, 연세대학교 공학원, 대한민국, 2018최병준
◾ 윤희주, 최석, 최병준, 전극물질이 AlN 기반 저항변화 메모리에 미치는 영향, 2018년 추계학술대회 - 인공 지능 시대의 반도체/디스플레이 기술, 연세대학교 공학원, 대한민국, 2018최병준
◾ 정원희, 김용, 최병준, Ag 도핑된 HfOx 박막의 도핑 농도에 따른 스위칭 특성, 2018년 추계학술대회 - 인공 지능 시대의 반도체/디스플레이 기술, 연세대학교 공학원, 대한민국, 2018최병준
◾ 최병준, Resistive Switching Materials on Demand, 2018년 추계학술대회 - 인공 지능 시대의 반도체/디스플레이 기술, 연세대학교 공학원, 대한민국, 2018최병준
◾ 남효원, 류성연, 최병준, 원자층 증착법으로 형성한 Gd2O3 박막의 온도 효과, 2018년 추계학술대회 - 인공 지능 시대의 반도체/디스플레이 기술, 연세대학교 공학원, 대한민국, 2018최병준
◾ 정원희, 김용, 류성연, 한정환, 최병준, 코스퍼터링법으로 제작한 Ag 도핑된 HfO2 박막의 전기적 특성, 2018 추계학술강연 및 발표대회 - 강연 및 발표논문 초록집, Busan, South Korea, 2018최병준
◾ 오승익, 임인혁, 최석, 류성연, 김용, 최병준, 금속층의 열전도도가 GeTe 상전이에 미치는 효과, 2018 추계학술강연 및 발표대회 - 강연 및 발표논문 초록집, Busan, South Korea, 2018최병준
◾ 남효원, 류성연, 최병준, 원자층 증착법을 이용한 Gd2O3 박막의 특성평가, 2018 추계학술강연 및 발표대회 - 강연 및 발표논문 초록집, Busan, South Korea, 2018최병준
◾ Yong Kim, Sung Yeon Ryu. Won Hee Jeong, Byung Joon Choi, Self-rectifying Memristive Crossbar Array for Neuromorphic Application, ENGE 2018 - The 5th International Conference on Electronic Materials and Nanotechnology for Green Environment, Ramada Plaza Jeju Hotel, Jeju, Korea, 2018최병준
◾ 윤희주, 이현호, 최병준, AlN 기반 저항변화메모리의 신뢰성 개선, 2018 추계학술대회 - 4차 산업혁명시대에서 소재부품산업의 미래, KINTEX, 대한민국, 2018최병준
◾ Sung Yeon Ryu, Y. Kim, W.Y. Park, S.G. Kim, B.J. Choi, Influence of Iintrinsic and Extrinsic Dopants in HfOx Films for Resistive Switching Memory, AVS 65th International Symposium & Exhibition - Technical & Exhibitor Program, Long Beach Convention Center, Long Beach, CA, 2018최병준
◾ Yong Kim, S.Y. Ryu, W.H. Jeong, K.S. Min, B.J. Choi, Selector-less Crosbar Array through Self-rectifying Characteristic of Pt/HfO2/Ti Memristor, AVS 65th International Symposium & Exhibition - Technical & Exhibitor Program, Long Beach Convention Center, Long Beach, CA, 2018최병준
◾ Yong Kim, Sung Yeon Ryu, Won Hee Jeong, Byung Joon Choi, Selector-less crossbar array by self-rectifying memristors, 2018 International Nanophotonics and Nanoenergy Conference Program Book, EWHA Womans University, Seoul, Korea, 2018최병준
◾ Dong Ha Kim, Seung Chul Shin, Seok Choi, Jeong Hwan Han, Byung Joon Choi, Pretreatment Effect of SnO2 Layer Coated on Carbon Nanofiber by Atomic Layer Deposition, 18th International Conference on Atomic Layer Deposition Technical Program & Abstracts, Incheon, South Korea, 2018최병준
◾ Sungyeon Ryu, Seung Ik Oh, Woo Young Park, Soo Gil Kim, Byung Joon Choi, Atomic Layer Deposition of Al- and Ga-doped HfOx Films for Resistive Switching Layer, 18th International Conference on Atomic Layer Deposition Technical Program & Abstracts, Incheon, South Korea, 2018최병준
◾ Yong Kim, Min Soo Kim, Hee Ju Yun, Won Hee Jeong, Byung Joon Choi, Temperature Effect on Thermally Grown AlN Films by Atomic Layer Deposition, 18th International Conference on Atomic Layer Deposition Technical Program & Abstracts, Incheon, South Korea, 2018최병준
◾ Dong Ha Kim, Dong-Yo Shin, Young-Geun Lee, Geon-Hyoung An, Jeong Hwan Han, Hyo-Jin Ahn, and Byung Joon Choi, Effects of SnO2 Layer Coated on Carbon Nanofiber for the Methanol Oxidation Reaction, The 15th International Symposium on Novel and Nano Materials Program Book, Lisbon, Portugal, 2018최병준
◾ 오승익, 류성연, 남효원, 최병준, 계면 상전이메모리의 방열층에 대한 고찰, 2018 한국전기전자재료학회 하계학술대회, 대명 델피노리조트, 대한민국, 2018최병준
◾ 윤희주, 김용, 정원희, 최석, 최병준, 알루미늄 질화물 기반 저항변화메모리에 수분이 미치는 효과, 2018 한국전기전자재료학회 하계학술대회, 대명 델피노리조트, 대한민국, 2018최병준
◾ 김용, 정원희, 윤희주, 한정환, 최병준, 저전압 구동과 자기 제어 특성을 갖는 Pt/HfO2/Ti 크로스바 어레이 소자, 2018 한국세라믹학회 춘계학술대회, 창원컨벤션센터, 대한민국, 2018최병준
◾ 류성연, 오승익, 남효원, 박우영, 김수길, 최병준, 저항변화메모리를 위한 Al 또는 Ga이 도핑된 HfOx 박막의 원자층 증착법, 2018 한국세라믹학회 춘계학술대회, 창원컨벤션센터, 대한민국, 2018최병준
◾ Yurim Kwon, Hogyoung Kim and Byung Joon Choi, Au/bulk GaN Schottky junctions with an AlN passivation layer, 2018 5th Global Conference on Polymer and Composite Materials (PCM 2018) Conference Guide, Kitakyushu City, Japan, 2018최병준
◾ Sungyeon Ryu, Seung Ik Oh, and Byung Joon Choi, Post-Annealing Effect on the Switching Characteristics of HfOx-based RRAM, International Symposium on Innovation in Materials Processing Abstract book, Phoenix Jeju, Korea, 2017최병준
◾ Yong Kim, Min Soo Kim, Hee Ju Yun, and Byung Joon Choi, Structural and electrical properties of AlN thin films by thermal atomic layer deposition, International Symposium on Innovation in Materials Processing Abstract book, Phoenix Jeju, Korea, 2017최병준
◾ Dong Ha Kim, Dong-Yo Sin, Young-Geun Lee, Hyo-Jin Ahn, and Byung Joon Choi, Pretreatment Effect of SnO2 Coating on Carbon Nanofiber by Atomic Layer Deposition, International Symposium on Innovation in Materials Processing Abstract book, Phoenix Jeju, Korea, 2017최병준
◾ Byung Joon Choi and Kyeong-Sik Min, Memristive crossbar array for conventional neural network, The 14th US-Korea Forum on Nanotechnology, The Westin Tysons Corner, Falls Church, VA, USA, 2017최병준
◾ 김동하, 신동요, 김용, 안효진, 최병준, 원자층 증착법을 이용한 탄소나노섬유 분말 코팅, 2017 춘계학술강연 및 발표대회 강연 및 발표논문 초록집, 경주 현대호텔, 2017최병준
◾ Min Soo Kim, Seong Yeon Ryu, Dong Ha Kim, and Byung Joon Choi, Ternary Nitride Memristors, China Semiconductor Technology International Conference, Shanghai International Conference Center, 2017최병준
◾ Tae Hyung Park, Hae Jin Kim, Soo Gil Kim, Byung Joon Choi, and Cheol Seong Hwang, Anomalous quantum conductance in Ta2O5 and HfO2 resistance switching memory, 제24회 한국반도체학술대회, 강원도 대명비발디파크, 2017최병준
◾ Sung Yeon Ryu, You Rim Kwon, Tae Hyung Park, Hae Jin Kim, Soo Gil Kim, Cheol Seong Hwang, and Byung Joon Choi, Post-annealing effect on the switching characteristics of HfOx-based RRAM, 제24회 한국반도체학술대회, 강원도 대명비발디파크, 2017최병준
◾ Hogyoung Kin, Min Soo Kim, Seung Yu Yoon, Byung Joon Choi, Electrical characterization of Au/n-InP contacts by inserting Al2O3 layer by atomic layer deposition, 제24회 한국반도체학술대회, 강원도 비발디파크, 2017최병준
◾ Min Soo Kim, Dong Ha Kim, and Byung Joon Choi, Temperature dependence of AlN films grown by thermal atomic layer deposition, 제24회 한국반도체학술대회, 강원도 비발디파크, 2017최병준
◾ Sung Yeon Ryu and Byung Joon Choi, Low current operation of Ta2O5–based vertical resistive switching memory, 제24회 한국반도체학술대회, 강원도 대명비발디파크, 2017최병준
◾ Byung Joon Choi, Multi-layered selector and switch devices enabled by atomic layer deposition for crosspoint memory, 16th International Conference on Atomic Layer Deposition, 아일랜드 더블린, 2016최병준
◾ 이노호, 김동하, 윤성유, 최병준, SnO2를 마찰층으로 하는 마찰 대전소자의 효율성 및 신뢰성 향상, 2016년도 대한금속재료학회 춘계학술대회 초록집, 경상북도 경주, 2016최병준
◾ Byung Joon Choi, Multi-layered selector and switch devices enabled by atomic layer deposition for crosspoint memory, The 12th Korean ALD Workshop proceedings, 서울 한양대학교, 2016최병준
◾ T.H. Park, S.J. Song, H.J. Kim, S.G. Kim, S. Chung, B.Y. Kim, K.J.Lee, K.M. Kim, B.J. Choi, C.S. Hwa, Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell, 제23회 한국반도체학술대회 프로그램북, 강원도 하이원리조트, 2016최병준
◾ No Ho Lee, Dong Ha Kim, Min Soo Kim, and Byung Joon Choi, 마찰 대전소자에서의 SnO2 반도체 마찰층의 두께 효과에 관한 연구, 제23회 한국반도체학술대회 프로그램북, 강원도 하이원리조트, 2016최병준
◾ Sung Yeon Ryu, Do Yeon Lee, You Rim Kwon, Vladimir Kornijcuk, and Byung Joon Choi, Trilayer tunnel selector for memristor memory cell, 제23회 한국반도체학술대회 프로그램북, 강원도 하이원리조트, 2016최병준
◾ Yoo Rim Kwon, Dong Ha Kim, and Byung Joon Choi, Relation between resistance and capacitance in atomically dispersed Pt-SiO2 thin films for multilevel resistance switching memory, 제23회 한국반도체학술대회 프로그램북, 강원도 하이원리조트, 2016최병준
◾ No Ho Lee, Min Soo Kim, Seong Yu Yoon, Dae Ho Kim, and Byung Joon Choi, Comparative study of AlN films grown by thermal and plasma-assisted atomic layer deposition, 제23회 한국반도체학술대회 프로그램북, 강원도 하이원리조트, 2016최병준
◾ Sung Yeon Ryu, Dong Ha Kim, and Byung Joon Choi, Growth of semiconducting TaNx films by atomic layer deposition and its electrical transport, 제23회 한국반도체학술대회 프로그램북, 강원도 하이원리조트, 2016최병준
◾ 이노호, 최병준, 안효진, 구본율, 마찰대전소자 특성 향상을 위한 SnO2 박막의 마찰특성 연구, 한국세라믹학회 추계학술대회 및 총회, 인천 송도컨벤시아, 2015최병준
◾ 이도연, 백수정, 최병준, Ta2O5 기반 RRAM소자의 FTO, Pt 하부전극의 저항변화 특성, 한국세라믹학회 추계학술대회 및 총회, 인천 송도컨벤시아, 2015최병준
◾ 김대호, 윤성유, 최병, 대기모니터링용 SnO2 반도체형 가스센서 개발, 한국세라믹학회 추계학술대회 및 총회, 인천 송도컨벤시아, 2015최병준
◾ 류성연, 최병준, 반도체성 TaN1+x 박막의 전기 전도 기구 분석, 한국세라믹학회 추계학술대회 및 총회, 인천 송도컨벤시아, 2015최병준
◾ 박태형, 송슬지, 김혜진, 김수길, 정수옥, 김영범, 이기정, 김경민, 최병준, 황철성, 28 nm 직경의 매우 얇은 Ta2O5 저항 변화 메모리에서 저항 변화층 두께의 효과, 한국세라믹학회 추계학술대회 및 초록, 인천 송도컨벤시아, 2015최병준
◾ 최병준, 이도연, 류성연, Vladimir Kornijcuk, 저항변화메모리를 위한 다층박막의 터널링 선택소자, 한국세라믹학회 추계학술대회 및 총회, 인시 송도컨벤시아, 2015최병준
◾ Byung Joon Choi, Taeyong Eom, and Cheol Seong Hwang, Selective Growth of GeSbTe Phase-Changing Materials Utilizing Self-Aligned Confined Structure, Technical & Exhibitor program AVS 62nd International Symposium & Exhibition, San Jose Convention Center, 2015최병준
◾ Daeho Kim, No Ho Lee, and Byung Joon Choi, Resistive switching in AlN and AlxGa1-xN films grown by plasma enhanced atomic layer deposition, Atomic Layer Deposition 15th International Conference 2015 Technical program & Abstracts, 포틀랜드 힐튼 호텔, 2015최병준
◾ Kyung Min Kim, Byung Joon Choi, J. Joshua Yang, Zhiyong Li, R. Stanley Williams, ALD memristor and selector devices for RRAM applicaiton, Atomic Layer Deposition 15th International Conference 2015 Technical program & Abstracts, Portland Hilton, 2015최병준
◾ Daeho Kim and Byung Joon Choi, Study on the resistive switching phenomena in AlN and AlxGa1-xN films grown by atomic layer deposition, 제22회 한국반도체학술대회, 인천 송도컨벤시아, 2015최병준
◾ Taeyong Eom, T. Gwon, S. Yoo, Byung Joon Choi, Moo-Sung Kim, I. Buchanan, M. Xiao, C. S. Hwang, Conformal Formation of Ge2Sb2Te5 film for phase change memories realized by controlling non-ideal behaviors of ALD, 제22회 한국반도체학술대회, 인천 송도컨벤시아, 2015최병준
◾ Jae Ho Lee and Byung Joon Choi, Controlling Structural and Electrical Properties by Dispersing Metallic Nanoparticle into Dielectric Thin Films for ReRAM application, 제22회 한국반도체학술대회, 인천 송도컨벤시아, 2015최병준
◾ 이재호, 신인주, 이성우, 김형철, 최병준, Controlling Structural and Electrical Properties by Dispersing Pt Nanoparticle into SiO2 Thin Film, 2014년도 한국재료학회 추계학술대회 및 제27회 신소재 심포지엄, 대전 컨벤션 센터, 2014최병준
◾ Byung Joon Choi, J. Joshua Yang, Min-Xian Zhang, R. Stanley Williams, New Materials for Memristive Switching, International Conference on Optoelectronics and Microelectronics Technology and Application, 중국 텐진, 2014최병준
◾ Taeyong Eom, T. Gwon, S. Yoo, Byung Joon Choi, M.-S. Kim, I. Buchanan, M. Xiao, C. S. Hwang, Conformal formation of (GeTe2)(1-x)[Sb(1-y)Tey]x thin film for phase change memories application, 14th Non-Volatile Memory Technology Symposium (NVMTS 2014), Jeju Grand Hotel, 2014최병준
◾ Byung Joon Choi, Engineering of oxide-based resistive switching materials for nonvolatile memory application, Workshop on Oxide Heterostructures 2014, 서울, 2014최병준
◾ Byung Joon Choi, Ning Ge, J. Joshua Yang, Min-Xian Zhang, R. Stanley Williams, Kate J. Norris, Nobuh, New materials for memristive switching, 2014 IEEE International Symposium on Circuits and Systems (ISCAS), Melbourne Convention Centre, 2014최병준
◾ Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Byung Joon Choi, Cheo Seong Hwang, Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM, International Symposium on Circuits and Systems (ISCAS), Melbourne Convention Centre, 2014최병준
저역서
◾ R. Waser, Resistive switching: From fundamentals of Nanoionic Redox Processes to Memristive Device Applications Device Application, 편서, 978-3-527-33417-9, Wiley VCH, 2016최병준
특허
US Patent;

1. Nam Kyun Park, Hae Chan Park, Cheol Seong Hwang, Byung Joon Choi, "Phase change memory device with reinforced adhesion force" (2010/3/30).

2. Jianhua Yang, Byungjoon Choi, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R Stanley Williams, "Memelectronic device" (2014/7/1).

3. Jianhua Yang, Gilberto Medeiros Ribeiro, Byung-Joon Choi, Stanley Williams, "Hybrid circuit of nitride-based transistor and memristor" (2014/11/18).

4. B. J. Choi, J. Yang, S. Williams, G. Gibson, W. Jackson, "Nonlinear memristor devices with three-layer selectors" (2018/2/27).


Korea Patent;
◾ 저항 스위칭 소자 및 이를 이용한 상변화 메모리 소자, 특허 등록, 대한민국, 10-2119306, 2020최병준
◾ 전기화학적 성능이 개선된 연료전지 촉매용 복합체의 제조방법 및 이를 이용한 복합체, 특허 등록, 대한민국, 10-2068409, 2020최병준
◾ 분말 코팅 반응기, 특허 등록, 대한민국, 10-1868703, 2018최병준
◾ 방독면 투시 렌즈의 초점 거리 조절 장치(홀 효과를 이용하여 초점 조절이 가능한 군사용 렌즈), 특허 등록, 대한민국, 10-1825932, 2018최병준
◾ 반도체 가스센서 및 이의 제조방법, 특허 등록, 대한민국, 10-1739022, 2017최병준
◾ 마찰전기 발전소자용 복합체, 이의 제조방법 및 이를 포함하는 마찰전기 발전소자, 특허 등록, 대한민국, 10-1714122, 2017최병준
연구프로젝트
◾ 확산형 멤리스터를 활용한 뇌신경 뉴런 기능 모사 연구, 한국연구재단, 2020.06.~2022.02.최병준
◾ 원자층 증착법으로 성장 시킨 가돌리늄 산화막의 기능성 연구, 산학협력단, 2020.03.~2021.02.최병준
◾ SC-MRAM향As-SiO2 selector 동작 해석을 통한 특성 조절 인자 확보, 에스케이하이닉스 주식회사, 2019.10.~2021.09.최병준
◾ 원자단위 계면 설계 기반 차세대 열전 에너지 변환 소재 개발, 산학협력단, 2019.06.~2022.02.최병준
◾ 분말 코팅을 위한 원자층 증착법, 산학협력단, 2019.03.~2020.02.최병준
◾ 플라즈마 강화 원자층 증착법에 의한 TaNx 박막의 전기 전도도 조절, 산학협력단, 2018.02.~2018.08.최병준
◾ 초고속/저에너지 멀티레벨 메모리/시냅스 소자 개발, 한국산업기술평가관리원, 2017.07.~2021.12.최병준
◾ 전처리를 이용한 탄소 나노 섬유의 균일한 SnO2 코팅막 형성, 산학협력단, 2017.07.~2018.06.최병준
◾ 멤리스터 Convolutional 신경회로망, 삼성전자(주), 2017.06.~2020.05.최병준
◾ ReRAM △Vrd개선을 위한 Resistor 신규 물질 개발, 에스케이하이닉스 주식회사, 2017.05.~2019.04.최병준
◾ FTO 전극의 메모리 소자 응용 연구, 산학협력단, 2015.10.~2016.04.최병준
◾ [LINC4차]솔라세라믹-대기 모니터링용 반도체형 가스센서 개발, 서울특별시, 2015.05.~2015.11.최병준
◾ III족 질화물 박막의 저온 ALD 성장 및 전자소자 응용, 한국연구재단, 2014.11.~2020.05.최병준
◾ 대전 마찰전기 효과를 이용한 발전소자 연구, 산학협력단, 2014.09.~2015.08.최병준
◾ 금속 산화물 저항변화메모리의 포밍 과정, 산학협력단, 2014.05.~2015.12.최병준
◾ 백금 나노입자가 분산된 이산화규소 박막의 전기 전도성 연구, 산학협력단, 2014.05.~2015.02.최병준
수상
◾ Realization of diffusive memristor adopting Li active metal into HfO2 by co-sputtering process, 우수발표상, 한국전기전자재료학회, 2021최병준
◾ Relation between remnant conducting filament and its relaxation in diffusive memristors, 현장우수포스터상, 제28회 한국반도체학술대회, 2021최병준
◾ Memristor Binarized Neural Networks, Grand Prize in Haedong Best Paper Award, 대한전자공학회, 2020최병준
◾ Effects of atomic-layer-deposited ZnO layer on SnSe powder materials, Shinhan Diamond Best Presentation Award, International Symposium on Novel and Nano Materials, 2020최병준
◾ Characterization of SnSe thermoelectric powder materials coated by rotary atomic layer deposition, 우수논문상, 한국전기전자재료학회, 2020최병준
◾ Fabrication and characterization of Hafnium nitride based selector device in crossbar array by atomic layer deposition, 우수논문상, 한국전기전자재료학회, 2020최병준
◾ Multilevel Operation of Hf(O)N-based Resistive Random Access Memory Grown by Atomic Layer Deposition, 우수논문상, 한국전기전자재료학회, 2020최병준
◾ Oxide Semiconductor Based Photonic Memristors By Atomic Layer Deposition, 현장우수포스터상, 한국반도체학술대회, 2020최병준
◾ Effect Of Insertion Layer On The Electrical Characteristics Of Phase Change Memory, 현장우수포스터상, 한국반도체학술대회, 2020최병준
◾ Formation of AlxGa1-xN thin films by thermal atomic layer deposition, 우수포스터상, 한국반도체학술대회, 2019최병준
◾ 원자층 증착법으로 형성한 Gd2O3 박막의 온도 효과, 우수논문상, 한국반도체디스플레이기술학회, 2018최병준
◾ 발열층이 GeTe 상전이에 미치는 열적 효과 고찰, 우수논문상, 한국반도체디스플레이기술학회, 2018최병준
◾ 코스퍼터링법으로 제작한 Ag 도핑된 HfO2 박막의 전기적 특성, 우수발표논문상, 한국분말야금학회, 2018최병준
◾ Effects of SnO2 Layer Coated on Carbon Nanofiber for the Methanol Oxidation Reaction, Best Presentation Award, International Symposium on Novel and Nano Materials, 2018최병준
◾ Low Operating Voltage, Electroforming-free, and Self-rectifying Characteristics of Pt/HfO2/Ti Crossbar Array Device, 양송포스터상 우수논문, 한국세라믹학회, 2018최병준
◾ Pretreatment Effect of SnO2 Coating on Carbon Nanofiber by Atomic Layer Deposition, Best Presentation Award, Korea Institute of Metals and Materials, 2017최병준
◾ Reliability of ReRAM using FTO electrode, 대학생 프로젝트 경진대회 장려상, 한국신뢰성학회, 2015최병준
◾ 반도체성 TaN1+x 박막의 전기 전도 기구 분석, 양송 포스터상, 한국세라믹학회, 2015최병준
◾ 교내 우수교육상(2014), 교내 우수교육상(2014), 서울과학기술대학교, 2014최병준
기타(학회활동 등)
한국반도체학술대회(KCS) 박막분과위원회 위원 (2017 - 현재)
한국분말야금학회지(KPMI) 편집위원 (2020 - 현재)
유전체연구회 산학연구위원 (2021 - 현재)
한국전자전기재료학회(KIMMEE) E2M지 편집위원회 위원 (2018 - 2019)

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