전임교수
한정환교수
(Prof. Jeong-Hwan Han)
학력
- · 2006.03 – 2011.08 서울대학교 재료공학부 (박사)
· 2002.02 – 2006.02 서울대학교 재료공학부 (학사)
주요경력
- · 2025.10 – 현재 서울과학기술대학교 신소재공학과, 교수
· 2021.10 – 2025.09 서울과학기술대학교 신소재공학과, 부교수
· 2017.08 – 2021.09 서울과학기술대학교 신소재공학과, 조교수
· 2013.08 – 2017.08 한국화학연구원 화학소재연구본부, 선임연구원
· 2012.02 – 2013.08 IMEC, Belgium 박사 후 연구원
수상 내역
- ◾ Low-temperature area-selective cobalt deposition for advanced hybrid bonding applications, 현장우수포스터상, 한국반도체학술대회, 2026한정환◾ development of Ru ALD and ALE processes for continuous ultrathin low-resistivity films, 현장우수포스터상, 한국반도체학술대회, 2026한정환◾ area-selective atomic layer deposition of molybdenum carbide enabled by acetylacetone as a dual function inhibitor and counter-reactant, 현장우수포스터상, 한국반도체학술대회, 2026한정환◾ Valence-state controlled growth of p-type thin monoxide films by atomic layer deposition using a novel Sn precursor, poster recognition award, american vacuum society, 2025한정환◾ thermal atomic layer deposition of ru-incorporated molybdenum carbide thin films via inter-ligand reaction for advanced copper metallization, 1st place poster award, american vacuum society, 2025한정환◾ Fabrication of Ultrathin Ruthenium Films via a Top-Down Approach Using Thermal Atomic Layer Etching, 1st Place Poster Award, American vacuum society, 2025한정환◾ Area-Selective Atomic Layer Deposition of Molybdenum Carbide for Next-generation BEOL process, 장려상, 한국전기전자재료학회, 2024한정환◾ Study on the Etching Behavior of Ruthenium Thin Films Using Thermal Atomic Layer Deposition, 최우수상, 한국전기전자재료학회, 2024한정환◾ 고효율 페로브스카이트 탠덤 태양전지 제작을 위한 ALD SnO 정공 수송층 공정 개발 연구, 장려상, 한국전기전자재료학회, 2024한정환◾ 우수교원 표창, 2022학년도 연구분야 우수교원, 산학협력단, 2024한정환◾ Low-temperature Atomic Layer Deposition of Indium Oxide Films Using Novel Liquid Indium Precursor, 학부생포스터발표상, 한국반도체학술대회, 2023한정환◾ Fabrication of Atomic-Layer-Deposited MoO2 Films for the Electrode of the DRAM Capacitor, 학부생 포스터발표상, 한국반도체학술대회, 2023한정환◾ Fabrication of Ultrathin and Low-resistivity Ruthenium Films Deposited by Atomic Layer Deposition, 학부생포스터발표상, 한국반도체학술대회, 2023한정환◾ Impact of Atomic-Layer-Deposited Mo(C,N) Bottom Electrode on the Ferroelectric Properties of Hf-Zr-O Capacitors, 현장우수포스터상, 한국반도체학술대회, 2023한정환◾ Fabrication of Hf-Zr-O Based Ferroelectric Field Effect Transistor Using In-Ga-Sn-O Channel Layer by Atomic Layer Deposition, Best paper award, Korean International Semiconductor Conference on Manufactureing Technology 2022, 2022한정환◾ Improved Ga2O3 growth characteristics using three-step atomic layer deposition using newly synthesized Ga precursor, 장려상, 한국전기전자재료학회, 2022한정환◾ Effect of HfO2 or ZrO2 sub-layer on the Growth Characteristics of Atomic-layer-deposited SnO film, 우수상, 한국전기전자재료학회, 2022한정환◾ Effect of Atomic-layer-deposited HfO2 or ZrO2 interlayer on the electrical performance of p-type SnO thin film transistor, 현장우수포스터상, 한국반도체학술대회, 2022한정환◾ Phase Engineering and Film Chracteristics of rf Magnetron Sputtered MoO2 Thin Films, 최우수상, 한국전기전자재료학회, 2022한정환◾ Optimized p-type thin film transistor with atomic layer deposited SnO channel layer, SK하이닉스 논문상, 한국반도체학술대회, 2022한정환◾ Effect of Atomic layer deposited HfO2 or ZrO2 interlayer on the electrical performance of p-type snO thin film transistor, KCS 2022 현장우수포스터상, 한국반도체학술대회, 2022한정환◾ 2020년도 연구분야 우수교원, 2020년도 연구분야 우수교원 표창, 서울과학기술대학교 산학협력단, 2021한정환◾ atomic layer deposited Molybdenum carbide thin films using F-free precursor and H2 and its Cu diffusion barrier application, 최우수 발표상, 한국전기전자재료학회, 2021한정환◾ 분말 원자층증착법을 이용한 SnS 및 SnO 박막 코팅 및 이를 이용한 TiO2 촉매 특성 향상, 현장우수포스터상, 한국반도체학술대회, 2021한정환◾ 차세대 반도체 배선 공정을 위한 Cu 대체용 Molybdenum 금속 박막의 원자층박막공정 및 소재 특성 연구, 우수 논문상, 한국전기전자재료학회, 2020한정환◾ SrRuO3 버퍼전극을 이용한 페로브스카이트 BaTiO3 박막의 유전특성 향상, 우수 논문상, 한국전기전자재료학회, 2020한정환◾ High-mobility p-channel thin film transistor with atomic-layer-deposited SnO channel layer, 우수논문상, 한국전기전자재료학회, 2020한정환◾ Comparative study on the growth charactgeristics and film properties of PEALD SnO2 thin films using different plasma gases, Best Presentation Award, ISIMP 2019, 2019한정환
연구 분야
Research
박막소자 연구실은 최신 원자층증착(ALD) 기술을 기반으로 첨단 메모리 반도체 및 AI 반도체와 디스플레이를 비롯한 차세대 전자소자용 소재를 개발하고 있습니다. 나아가, 개발된 박막 소재 및 공정을 실제 소자에 응용하여 고성능 전자소자 구현을 목표로 활발한 연구를 진행하고 있습니다.
주요 논문 및 저서
- 1. Ji Sang Ahn, Wangu Kang, Jeong Hwan Han*, “Low-resistivity and high-density molybdenum carbonitride films grown by plasma-enhanced atomic layer deposition” Ceramics International, 51, 12138, (2025)
2. Jae Hyeon Lee, Wangu Kang, Jeong Eun Shin, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han*, “Growth of atomic layer-deposited monoclinic molybdenum dioxide films stabilized by tin oxide doping for DRAM capacitor electrode applications”, ACS Applied Materials & Interfaces, 16, 23606 (2024).
3. Jina Kim, Hee Won Jang, Myeong Gil Chae, Heenang Choi, Jeong Eun Shin, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han*, “Horizontally aligned ALD-SnO films grown on SiO2-passivated high-k HfO2 dielectrics for high-mobility and low-power P-channel thin-film transistor”, Surfaces and Interfaces, 44, 103726 (2024).
4. Pil Ju Youn, Mun Young Woo, Jong Hyeon Won, Jeong Min Im, Jun Hyuk Lee, Jun Hong Noh, Jeong Hwan Han*, “Aluminum-Doped Indium Oxide Electron Transport Layer Grown by Atomic Layer Deposition: Highly Efficient and Damage-Resistant Interconnection Solution for All-Perovskite Tandem Solar Cells with 25.46% Efficiency” Small, 20, 2407036 (2024).
5. Eun Chong Ko, Jae Yeon Kim, Hakseung Rhee, Kyung Min Kim, Jeong Hwan Han*, “Low-resistivity ruthenium metal thin films grown via atomic layer deposition using dicarbonyl-bis (5-methyl-2, 4-hexanediketonato) ruthenium (II) and oxygen”, Materials Science in Semiconductor Processing 156, 107258 (2023).
6. Myeong Gil Chae, Jina Kim, Hee Won Jang, Bo Keun Park, Taek-Mo Chung, Seong Keun Kim, Jeong Hwan Han*, “High field-effect mobility and on/off current ratio of p-type ALD SnO thin-film transistor”, ACS Applied Electronic Materials 5, 1992 (2023).
7. Ji Sang Ahn, Wangu Kang, Jeong Hwan Han*, “Thermal atomic layer deposition of molybdenum carbide films using bis (ethylbenzene) molybdenum and H2”, Journal of Vacuum Science & Technology A, 41, 012405 (2023).
8. Seok Choi, Abu Saad Ansari, Hee Ju Yun, Hogyoung Kim, Bonggeun Shong, and Byung Joon Choi*, “Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition”, J. Alloys Compd., 854, 157186 (2021).
9. Byung Joon Choi, Antonio C. Torrezan, John Paul Strachan, P. G. Kotula, A. J. Lohn, M. J. Marinella, J. Joshua Yang, and R. Stanley Williams, “High-speed and low-energy nitride memristors”, Adv. Funct. Mater. 26, 5290 (2016).
10. Byung Joon Choi, Jiaming Zhang, Kate J. Norris, Gary Gibson, Kyung Min Kim, Warren Jackson, Max Zhang, Zhiyong Li, J. Joshua Yang, and R. Stanley Williams, “Trilayer tunnel selectors for memristor memory cells”, Adv. Mater. 28, 356 (2016).
